Ge/Si heterostructures with coherent Ge quantum dots in silicon for applications in nanoelectronics

Abstract

The incorporation of Ge into modern Si-based electronics has generated a renewed interest in the detailed understanding of the fundamental properties of Ge/Si heterostructures with Ge nanoclusters. Among these structures quantum dots have been considered for their potential application in Si-based optoelectronic and microwave devices. Experimental studies are focused on atomic and molecular processes on the growth surface in the course of formation of quantum dots using molecular beam epitaxy. Superstructure and surface morphology are found to affect the ordering of nanoclusters' lateral arrangement. The possibility of reproducible technology for manufacturing small-sized ordered Ge nanocrystal ensembles in Si epitaxial films for device application is discussed.