Abstract
In this study, we introduced another very thin SiGe layer that was selectively grown on the Si buffer layer prior to the ultra- thin Si0.5Ge0.5 buffer growth. As a result, selective epitaxial growth of Ge film with good crystalline quality was realized without increasing intermediate layer thickness or thermal budget significantly. This technique is expected to be applicable for the Ge channel formation and other application that require selective Ge film formation with low thermal budget. The mechanism of selectivity enhancement by the first SiGe layer as well as its influence on crystalline quality of the Si0.5Ge0.5 buffer layer and Ge epitaxial layer above will be discussed in the presentation.
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