Abstract
A binary Te‐free phase‐change material Ge9.15Sb90.85 (GS) is investigated as the heat‐mode resist. A high etching selectivity ratio can be achieved by matching a suitable developer. A reasonable explanation for the positive development is proposed based on the chemical binding energy analysis. High‐resolution relief patterns are fabricated on the GS films by laser direct writing and wet etching. It reveals that GS is a promising heat‐mode resist for the fabrication of photonic devices.
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