Abstract
Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this work, we introduce ozone-oxidation and low temperature plasma nitridation to engineer Ge/insulator interface. Density of interface states (Dit) across the bandgap and close to conduction band edge was extracted using conductance technique at low temperatures. Electrical qualities of Ge-GeO2 and Ge-GeON interfaces are investigated. Thermal stabilities and desorption pathways of those passivation techniques are investigated through Ge 3d spectra measurements. Low Dit advantage of ozone-oxidation technique is combined with thermal stability provided by plasma nitridation.
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