Abstract
Strong Ge morphological modifications were observed upon an ordered C-pre-covered Si(001)-c(4×4) reconstructed surface used as a template as compared to the growth on bare Si(001)-(2×1) substrates. While on bare substrates, the Ge wetting layer of the Stranski–Krastanov mode has a critical thickness of approximately 3–4 monolayers (ML), with the c-(4×4) template, island nucleation already occurs after 1 Ge ML, and growth proceeds in a Volmer–Weber mode. This suggests that the C-rich surface derm associated with the c-(4×4) reconstruction is able to strongly affect the Ge wetting.
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