Abstract
High performance Ge inversion (INV) and junctionless (JL) gate-all-around (GAA) FETs are demonstrated on epi-Ge layer on SOI. The anisotropic etching is used to remove the defect near the Ge/Si interface and to form gate-all-around structure. The INV and JL pGAAFETs have I on of 235 µA/µm and 270 µA/µm at V GS − V T = −2 V and V DS = −1 V, respectively, and show good subthreshold characteristics. The (111) sidewall INV nFETs show 2X enhanced I on of 110 µA/µm with respect to the devices with near (110) sidewalls.
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