Abstract
Postannealing characteristics of in situ doped B atoms in poly-Si1−xGex (x⩽0.5) films on SiON have been investigated. Supersaturated electrically active B (2×1020cm−3) is obtained for as-chemical vapor deposition samples, and their thermal stability is significantly improved by increasing Ge fraction, e.g., the stability for poly-Si0.6Ge0.4 is ten times as high as that for poly-Si at 700–800°C. Such a Ge induced improvement will be a powerful tool to achieve poly-SiGe gate electrode for the next generation ultralarge scale integrated circuits. In addition, the deactivation process of electrically active B has been analyzed. Results indicated that deactivation processes consist of fast and slow processes. The former is due to movement of B atoms from substitutional to interstitial sites, which is enhanced by a local strain induced by the difference in atomic radii between Si and B atoms. The slow process was due to trapping of B at grain boundaries during grain growth. The two-state model based on the local strain compensation by Ge doping is proposed, which can well explain the Ge dependent thermal stability of electrically active B atoms.
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