Ge-Doped ${\beta }$ -Ga2O3 MOSFETs

Abstract

We report on MOSFETs fabricated on Ge-doped $\beta $ -Ga2O3 homoepitaxial material grown by molecular beam epitaxy on (010) Fe-doped semi-insulating substrates. The Ge-doped channel devices performed similar to previously reported devices with Sn- and Si-doped channels with the drain current ON/OFF ratios of $> 10^{8}$ and the saturated drain current of >75 mA/mm at $V_{G}=0$ V. Hall effect measurements showed a high carrier mobility of 111 cm2/( $\text{V}\cdot \text{s}$ ) with $4\times 10^{17}$ cm $^{-3}$ active carriers. A MOSFET with a gate-drain spacing of $5.5~\mu \text{m}$ had a three-terminal breakdown voltage of 479 V.