Abstract
Interdiffusions at Ge/GaAs heterojunctions formed by the epitaxial deposition of Ge films on GaAs have been studied for temperatures ranging from 650–800 °C. The diffusion coefficients of Ge in GaAs have been found to be 1.6×10−5 exp(−2.06/kT) for Cr: and Si:doped GaAs. After the diffusion heat treatment, Ge was found to be p type and ohmic.
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