Abstract

We report growth of Si 1 − x Ge x /Si and Ge on insulator by Ge diffusion and SPE (solid phase epitaxy). Different annealing conditions were carried out and evaluated by X-ray diffraction. Ge diffusion and SPE growth of Ge on Si are observed after annealing at 800 °C. EDX (electron dispersive X-ray) composition analysis shows that the top 100 Å Si 1 − x Ge x layer is quite uniform with Ge content variation of less than 2%. TEM (transmission electron microscopy) picture shows no crystal orientation misalignment between the Si and the top Si 1 − x Ge x layer. This simple and cost-effective process can be used to make Si 1 − x Ge x /Si substrate for high-mobility metal oxide semiconductor field effect transistor application. In addition, Ge on insulator structure was achieved by SPE lateral growth on pre-patterned SiO 2.

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