Abstract

Although terahertz technology has demonstrated strong potential for various applications, detectors operating in the terahertz region are yet to be fully established. Numerous designs have been proposed for sensitive terahertz detection, with a nanowire-based field-effect transistor (FET) being one of the most promising candidates. In this study, we use a Ge-core/a-Si-shell nanowire coupled to a bow-tie antenna to fabricate a FET structure for terahertz detection. We achieved high responsivity and low noise equivalent power (NEP) upon irradiation at 1.63 THz. The proposed sensitive terahertz detector will further promote the development of terahertz technology in fields such as spectroscopic analysis and imaging.

Highlights

  • The terahertz spectrum is referred to as the terahertz gap and is defined as the frequency range from 0.1 THz to 10 THz

  • Another limitation is that the photon energy of a terahertz wave is much lower than that of visible light, with devices based on traditional optoelectronic materials being extendable only to tens of THz [10,11]

  • A Si shell was used to passivate the surface of the Ge to protect it from oxidation and extend its preservation time

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Summary

Introduction

The terahertz spectrum is referred to as the terahertz gap and is defined as the frequency range from 0.1 THz to 10 THz. Thermoelectric sensors, Schottky barrier diodes, quantum effect sensors, and nanowire photoconductive detectors [12,13,14] These techniques have shortcomings, including high cost and complexity, low detection rate, and lack of sensitivity, which affect their usefulness in practical applications. FETs based on nanowires (NWs) as the channel have shown promise for room-temperature, high-sensitivity terahertz detection [18,19]. In such devices, the impinging signal is collected by a resonant or a broadband antenna and fed in to the source and gate terminals. High responsivity with low NEP was demonstrated, which is superior to the results field-effect hole mobility compared to the Ge NWs without a-Si-shell, which may lead to a better of related studies.

Materials and higher than those ofMethods
Illustration showing foran anNW-based
SEMof image of the fabricated
Discussion
Conclusions
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