Ge Content Optimization in Ge(SbSe)N OTS Materials for Selector Applications

Abstract

In this article, we investigate the influence of germanium content in GeSbSeN-based ovonic threshold switching (OTS) selector devices. We performed physico-chemical analyses on five different Gex(SbSe)1–xN alloys to understand how the germanium content influences the material structure and its integrity once submitted to temperatures up to 400 °C. Thanks to the electrical characterization of Gex(SbSe)1–xN OTS devices, we analyze the evolution of the electrical parameters along cycling up to 108 cycles and before and after annealing at 400 °C. Cycle -to -cycle variability and drift phenomenon are also investigated. Finally, we demonstrate how Ge content should be properly tuned to improve the thermal stability of the alloy without affecting the leakage current and the electrical parameters’ variability.