Abstract
Photoluminescence (PL) properties of Si 1−x Ge x Si disordered superlattices ( d-SLs) with various Ge compositions ( x < 0.55) are studied. Thermal quenching properties and excitation power dependence of PL properties are investigated for the estimation of the disorder strength and for the assignment of the luminescence process, respectively. The red-shift energy of PL peak, PL intensity ratio I(d- SL) I(o- SL) , and the characteristic temperature T 0 become large by increasing the Ge composition. Improvement of the PL properties are owing to the strong hole localization effect.
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