Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain**Supported by the National Natural Science Foundation of China under Grant No 61504120, the Zhejiang Provincial Natural Science Foundation of China under Grant No LR18F040001, and the Fundamental Research Funds for the Central Universities.

Abstract

Ge complementary tunneling field-effect transistors (TFETs) are fabricated with the NiGe metal source/drain (S/D) structure. The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of sufficiently high Schottky barrier heights. As a result, the Ge p- and n-TFETs exhibit decent electrical properties of large ON-state current and steep sub-threshold slope (S factor). Especially, Id of 0.2 μA/μm is revealed at Vg − Vth = Vd = ± 0.5 V for Ge pTFETs, with the S factor of 28mV/dec at 7 K.