Ge Atomic Layer Epitaxy by Use of Ar Ion Laser Heating

Abstract

Ge atomic layer epitaxy (ALE) was demonstrated using the technique of iterative surface reaction of diethylgerman (Ge(C 2 H 5 ) 2 H 2 ) gas followed by thermal desorption of the ethyl group. The desorption was carried out by Ar ion laser heating which provided fast response and high controllability. Single-crystal growth of one layer per cycle was attained with good reproducibility without carbon contamination using this technique