Ge and III/V as Enabling Materials for Future CMOS Technologies

Abstract

Future CMOS technologies will require the use of substrate materials with a very high mobility in order to fulfill the performance requirements. It was show that Ge is an enabling material to introduce these new channel materials in a Si- compatible format. The first steps towards demonstrating the feasibility of an ultra high performance CMOS technology with Ge pMOS and III/V nMOS devices were shown. Good device performance was obtained on short channel Ge pMOS devices fabricated in a Si-like flow. The selective growth of GaAs on Ge was demonstrated. This work also opens the path into introducing added functionality to CMOS circuits by incorporating more advanced III/V material stacks that can be used for optical components or other applications, making this into a daring approach to further performance enhancements in future generation technologies.