Abstract
Gd2O3 thin films as high-K gate dielectrics were deposited on Si substrates by magnetron sputtering at 550 °C and 13 Pa. X-ray diffraction and cross sectional high-resolution transmission electron microscopy studies revealed that the Gd2O3 film was crystalline and it was consisted of a mixture of cubic and monoclinic phases. And the film show preferential orientation growth: (111)cubic//(001)Si and (401)monoclinic//(001)Si. The Gd2O3 thin film presented acceptable electrical properties such as low leakage current density of 3.6×10-5 A/cm2 at +1 V with capacitance equivalent SiO2 thickness of 2.54 nm. Rapid thermal annealing in N2 atmosphere can passivate a large amount of oxygen vacancy and improve the electrical properties.
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