Abstract
This paper estimates the robustness of non-volatile device (NVM) Gadolinium (Gd) doped Hafnium oxide (HfO2) nanoparticles (NPs) based memristor which was constructed using as-formed and annealed nanoparticles in 600 °C and 800 °C temperature, based on their performance in various basic image processing applications (i.e. edge detection filter and noise-canceling filter). A catalytic free glancing angle deposition technique (GLAD) is employed to grow Gd doped HfO2 nanoparticles (NPs) of 8 nm range on the thin film of Silicon oxide SiOx in 30 nm dimension. Annealing process is performed on Gd-doped HfO2 NPs and and the changes were demonstrated in its surface morphology. The elemental composition of the device was analyzed by Energy Dispersive X-ray (EDX). Photoluminescence (PL) analysis revealed that the topography and electrical characteristics of Gd-doped HfO2 alter swiftly after annealing process. A leakage current, interface state density (Dit) factor emphasizes that the device annealed at 600 °C portrayed significant improvement in the non-volatile characteristics in comparison with other devices. Additionally, the endurance of the device annealed at 600 °C was seen to possess more than decades of memory potential. The C-V and hysteresis curve measurement demonstrated maximal charge accumulation relative to other devices. Crossbar array is designed from both as-formed and annealed memristor devices.
Highlights
Memory Processing System (MPU) and Graphics Processing Technology (GPU) have being receiving substantial consideration for human retina diagnosis, some of the edge detection techniques followed include Laplace, Canny, Sobel and so on [1]
We have proposed an alternate system to counter this challenge
The paper is organized as follows: section 2 describes development methods of Gadolinium (Gd) doped Hafnium oxide (HfO2) nanoparticles on Silicon oxide (SiOx) thin film with Copper bottom contact on Si substrate, while section 3 discussed different analytical procedures based on which the performance of nonvolatile memory (NVM) devices are evaluated
Summary
Memory Processing System (MPU) and Graphics Processing Technology (GPU) have being receiving substantial consideration for human retina diagnosis, some of the edge detection techniques followed include Laplace, Canny, Sobel and so on [1]. An MPU involves non-volatile devices (NVM) which plays a significant role in the artificial retina and brain computing applications [1]–[3]. Attractive charecterstics such as high density, better flexibility, low power consumption, and huge stability makes nonvolatile memory (NVM) prolific and prominent for resistive. The paper is organized as follows: section 2 describes development methods of Gadolinium (Gd) doped Hafnium oxide (HfO2) nanoparticles on SiOx thin film with Copper bottom contact on Si substrate, while section 3 discussed different analytical procedures based on which the performance of NVM devices are evaluated.
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