Gating-induced Mott transition in NiS2

Abstract

${\mathrm{NiS}}_{2}$ has been widely regarded as a model system to study the bandwidth-controlled Mott transition, as enabled by isovalent Se chemical substitution on the S sites. Motivated by advances in electrostatic gating, we theoretically investigate the filling-controlled Mott transition induced by gating, which has the advantage of avoiding disorder introduced by dopants and stoichiometric changes. We use combined density-functional theory (DFT) and dynamical mean-field theory (DMFT) to study such a filling-controlled transition and compare it with the case of bandwidth control. We draw a temperature-filling phase diagram and find that the Mott-insulator to metal transition occurs with modest added electron concentrations, well within the capabilities of existing electrostatic gating experiments. We find that there is significant incoherent weight at the Fermi level in the metallic phase when the transition is induced by gating. In contrast, the spectral weight remains rather coherent in the case of the bandwidth-controlled transition.