Abstract
The effect of gate-oxide reliability in MOSFET on common-source amplifiers is investigated with the non-stacked and stacked structures in a 130-nm low-voltage CMOS process. The supply voltage of 2.5 V is applied on the amplifiers to accelerate and observe the impact of gate-oxide reliability on circuit performances including small-signal gain, unity-gain frequency, and output DC voltage level under DC stress and AC stress with DC offset, respectively. The small-signal parameters of amplifier with non-stacked structure strongly degrade under such overstress conditions. The gate-oxide reliability in analog circuit can be improved by stacked structure for small-signal input and output applications
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
