Gate‐Induced Drain Leakage in Junctionless Field‐Effect Transistors

Abstract

This chapter discusses how band‐to‐band tunneling (BTBT) leads to the formation of a parasitic bipolar junction transistor (BJT) in junctionless field‐effect transistors (JLFETs). The drain current due to gate‐induced drain leakage (GIDL) increases in a metal‐oxide‐semiconductor field‐effect transistor (MOSFET) as the gate voltage becomes more negative. However, in a JLFET, the situation is different due to the presence of the BTBT‐induced parasitic BJT. The parasitic BJT action in JLFETs increases the OFF‐state leakage current significantly and hinders their scaling to the sub‐10 nm regime. The chapter analyzes the device architectures proposed to mitigate the parasitic BJT action in JLFETs. The BTBT of electrons is considerably reduced in heterogate dielectric JLFETs (HGJLFETs) as compared to JLFETs with a high‐ k gate dielectric. Therefore, HGJLFETs not only exhibit a diminished BTBT but also offer an increased source‐to‐channel barrier height which hinders the triggering of parasitic BJT.