Abstract
We have demonstrated a gated-mode single-photon detector at 1550 nm using two thermoelectrically cooled InGaAs/InP avalanche photodiodes (APDs). Balanced outputs from the two APDs were used to cancel the charge and discharge spikes, which were attributable to capacitive behavior in a gated mode. The avalanche signals were not attenuated during the spike cancellation, which enable one to reduce the bias voltage applied to the APDs and thus reduce the dark count probability. We obtained a quantum efficiency of 10.5% with a dark count probability of 4.8E-5 per gate at 212 K. A single photon detector module that integrated APD and all necessary circuits into a compact bin has been performed.
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