Gate-Defined Quantum Dots in Ge/SiGe Quantum Wells as a Platform for Spin Qubits

Abstract

In the field of semiconductor quantum dot spin qubits, there is growing interest in leveraging the unique properties of hole-carrier systems and their intrinsically strong spin-orbit coupling to engineer novel qubits. Recent advances in semiconductor heterostructure growth have made available high quality, undoped Ge/SiGe quantum wells, consisting of a pure strained Ge layer flanked by Ge-rich SiGe layers above and below. These quantum wells feature heavy hole carriers and a cubic Rashba-type spin-orbit interaction. Here, we describe progress toward realizing spin qubits in this platform, including development of multi-metal-layer gated device architectures, device tuning protocols, and charge-sensing capabilities. Iterative improvement of a three-layer metal gate architecture has significantly enhanced device performance over that achieved using an earlier single-layer gate design. We discuss ongoing, simulation-informed work to fine-tune the device geometry, as well as efforts toward a single-spin qubit demonstration.