Abstract
A Hybrid Hall effect device utilizes the magnetic fringing field at the edge of a ferromagnet to produce Hall effect in the two dimensional electron gas confined in a semiconductor structure underneath the magnet. Addition of an electrostatic gate to this passive device provides an extra handle in the form of the gate bias to modulate the output Hall voltage. We demonstrated that silicon MOSFET which is the building block of CMOS circuits in today's world can be easily converted to a Hybrid Hall device, and the output Hall voltage can be well modulated by the gate bias. Room temperature measurements showed clear detection of switching of magnetization states of the ferromagnet that produces the fringing field. The device has high potential uses as a nonvolatile memory element, and an interface between magnetic quantum cellular automata (MQCA) and CMOS.
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