Abstract
The successful fabrication of field emission (FE) devices is directly related to process simplicity and device performance, which depends to a large extent on the tip material and emitter geometry. On the other hand, these characteristics are the most important issues influencing industrial applicability of the FE devices. In most typical solutions single emitter cells consist of a sharp tip located in the hollow, with the tip apex surrounded by a gate. The fabrication process described here is simple and allows self-aligned gate electrode formation. The field emission of the emitter tips is supported by a 50-nm diamond-like-carbon (DLC) film formed by chemical vapor deposition.
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