Abstract
Ionic liquid (IL) gating of functional oxides has drawn significant attention, since it can provide reversible changes in carrier concentration (~1014 cm $^{-2}$ ) at the interface, permitting the manipulation of electrical and magnetic properties of oxide films with low voltages. In this paper, we demonstrated the electric-field manipulation of transport properties in the dilute magnetic semiconductor of Zn0.98Mn0.02O (MZO), using an electric-double-layer transistor geometry through the IL electrolyte gating. The MZO layer exhibited reversible control of resistance up to 33% at 230 K. Moreover, magnetoresistance (MR) measurements revealed the influence of applied gate voltage ( $V_{g}$ ) on the magnetotransport behavior, which exhibited a positive MR in the low-field region and a negative MR in high magnetic field (up to 9 T). An increase in low-field positive MR ( $V_{g}$ from −2 to 2 V implied an enhanced ferromagnetic state of MZO due to an increased electron carrier concentration. The results demonstrated that a controllable carrier concentration by electric-field effect played an important role in the manipulation of magnetism in MZO.
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