Abstract
Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter.
Highlights
Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom
As the Q-factor characterizes the mechanical damping properties of the resonator, the observed enhancement of Q indicates an amplification of the mechanical motion driven by the single electron transport in the quantum dot (QD). This asymmetrically oscillating perturbation feature centred at the Coulomb peak has not been observed previously in other electromechanical resonator hybrid systems
Only the suppression of Q due to enhanced energy dissipation from single-electron fluctuations is observed in both biased metal- and carbon-nanotube-based SETs22–24,32. These latter observations are well explained by standard models where a single electron state in the single electron transistors (SETs) is assumed to be incoherently tunnel coupled to the lead electrodes and the delay is determined by the electron tunnelling process, which is generally much faster than the resonator motion
Summary
Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems Such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. The hybridization of a mechanical resonator with a quantum low-dimensional system has been barely developed despite its importance for many electromechanical applications[8,9,10,11,12,13,14,15,16,17] This is principally due to the integration of an electron cavity, that is, a quantum dot (QD), into the resonator with perfectly controlled coupling proving technologically challenging. With the aid of this QD-resonator platform, precise control of the backaction polarity and magnitude is demonstrated by only adjusting the operation point of the QD gate bias
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