Abstract
The coexistence of Rashba and Dresselhaus spin-orbit interactions (SOIs) in semiconductor quantum wells leads to an anisotropic effective field coupled to carriers' spins. We demonstrate a gate-controlled anisotropy in Aharonov-Casher (AC) spin interferometry experiments with InGaAs mesoscopic rings by using an in-plane magnetic field as a probe. Supported by a perturbation-theory approach, we find that the Rashba SOI strength controls the AC resistance anisotropy via spin dynamic and geometric phases and establish ways to manipulate them by employing electric and magnetic tunings. Moreover, assisted by two-dimensional numerical simulations, we identify a remarkable anisotropy inversion in our experiments attributed to a sign change in the renormalized linear Dresselhaus SOI controlled by electrical means, which would open a door to new possibilities for spin manipulation.
Highlights
Spintronics and spin-based quantum computing rely on the precise manipulation of spin orientations and related spin phases
Electron spins may couple directly to a magnetic field (Zeeman interaction) as well as to an electric field via spin-orbit interaction (SOI), resulting in a momentum-dependent effective magnetic field acting on itinerant spins
Perturbation-theory calculations indicate that the AC resistance anisotropy is modulated by the Rashba SOI strength via spin dynamic and geometric phases as well as by the direction of the in-plane Zeeman field [Section II & Appendix A2]
Summary
Spintronics and spin-based quantum computing rely on the precise manipulation of spin orientations and related spin phases. Perturbation-theory calculations indicate that the AC resistance anisotropy is modulated by the Rashba SOI strength via spin dynamic and geometric phases as well as by the direction of the in-plane Zeeman field [Section II & Appendix A2]. There is, a remarkable discrepancy: the experiment reveals an extra sign inversion in the anisotropy which is not reproduced by the numerical calculations This is consistently explained by a sign change of the renormalized linear Dresselhaus SOI emerging from strain effects in the working material, which is controlled electrically.
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