Abstract
The research reported in this work was focused on the turnoff performance of trial high-power gate-assisted turn-off thyristors (GATT's) based upon the novel double-interdigitated or two interdigitation levels (TIL) gate-cathode concept. The experiments were performed on high-voltage (2000 V) devices which were driven up to an anode current of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i_{T} = 500</tex> A. The test TIL GATT's were both gold-doped and normal (nongold,diffused). The investigations have shown that the application of a negative gate current of only 4 A leads to a reduction of the turn-off time i <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">q</inf> by a factor of 3 and 4-4.5 in gold-doped and normal devices, respectively, at T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">j</inf> = 100°C. At constant gate current, the dependence of t <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">q</inf> on the anode current level t <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> was found relatively weak. The additional experimental data provided in this work show clearly that sought-for benefits could be achieved by implementing the TIL pattern in power GATTs.
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