Abstract
A one dimensional analysis of Poisson's equation is carried out for the metal-oxide-semiconductor buried-channel charge-coupled device (MOSBCCD) and the Schottky-barrier version (SBCCD). This yields a simple design procedure for uniformly doped thin channel devices. The safe design boundaries are fixed by avalanche breakdown and charge containment in the bulk channel. These boundaries are unique functions of the channel parameters and become more critical for highly doped thin-channel devices.
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