Abstract
2D materials heterostructures are built by vertical stacking of solution‐processed reduced graphene oxide (rGO) film and few‐layer MoS2. The Raman and photoluminescence of the MoS2/rGO heterostructures show more significant peak shift compared to individual MoS2 or rGO film. The field‐effect transistors (FETs) based on such MoS2/rGO heterostructures show ambipolar behavior in the dark but n‐type behavior under illumination. This phenomenon provides a way to investigate the charge transport in valence band of MoS2. Due to charge separation caused by built‐in potential at MoS2/rGO interface, the recombination of photoexcited electron–hole pairs is effectively suppressed, leading to high photoresponsivity (≈2.4 × 104 A W−1) and photogain (≈4.7 × 104) of the MoS2/rGO heterostructures in ambient air with modulation of gate bias and drain–source bias.
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