Gate Swing Improving for the Nothing on Insulator Transistor in Weak Tunneling

Abstract

One of the most controversial parameter of the nothing on insulator (NOI) transistor was the subthreshold gate swing-SS. Therefore, the main purpose of this paper is to considerably improve the swing value by simulations from the previously reported 1.2 V/dec to 200 mV/dec. The first condition is to operate the NOI transistor in weak tunneling. The second strategy is to change the NOI structure: the bottom oxide thinning, the doping profile optimization, and the source geometry changing. In addition to the SS decreasing, other parameters for digital applications are improved: ION/IOFF ratio increases to 1011, threshold voltage decreases in inversion to –1 V and the switch time under the gate command reaches to 10 ps.