Gate Ringing Analysis and Driving Circuit Design of GaN HEMT

Abstract

GaN HEMT can operate at a high switching frequency because of its characteristics, but there are also related problems. This paper analyzes the negative effects of switching oscillations of GaN HEMT, introduces the design criteria of its driving circuit, and analyzes the causes of the Miller effect and gate ringing under the influence of high-frequency parasitic parameters. Then, the corresponding suppression strategies for the above two phenomena are given, and the design of the driving circuit is introduced. Finally, the validity and rationality of the designed driving circuit are verified by experiments.