Gate Quality Al2O3 by Molecular-Atomic-Deposition (MAD) and its Potential Applications in III-V Semiconductor CMOS Technology

Abstract

We report a simple technique for making high quality Al2O3, which is compatible to standard CMOS processes, and can be readily applied to III-V substrates. Our preliminary study indicates that such Al2O3 deposited on III-V semiconductors, without any additional surface treatment, gives rise to MOS CV characteristics comparable to their state-of-the-art counterparts that have gone through far more complicated processes. Our data also suggest that the recent advance in making functional III-V MOSFETs may be attributed primarily to the right choice of the gate dielectric material (i.e. Al2O3) and secondarily to the availability of suitable process techniques to produce high quality Al2O3.