Abstract
Gate oxide breakdown phenomena in a magnetron plasma were investigated from the viewpoint of the effect of magnetic field distribution on the radiation damage. It was found that strong parallel and normal magnetic field regions simultaneously present on a wafer induced surface potential difference along the wafer, and could cause gate oxide breakdown. An optimized magnetic field, consisting of flux lines parallel to the wafer, was found to reduce the degradation of the gate oxide.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
