Abstract
In this article, a novel gate mesa terminal (GMT) device structure incorporating a drain field plate is proposed. This design features mesa terminals with varying bevel angles positioned atop the gate. The objective is to enhance the breakdown voltage (Vbr) and reduce the on-resistance (Ron) of the lateral β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET). Through the implementation of the GMT structure, the peak electric field within the β-Ga2O3 MOSFET is redirected towards the passivation layer. This effectively mitigates the electric field in the epitaxial layer, thereby increasing Vbr. The optimal values for Vbr, specific on-resistance (Ron,sp) and maximum transconductance (gm) across various GMT structures are 4827 V, 9.9 mΩ·cm2 and 15.32 mS/mm, respectively. These metrics represent a 2.63-fold, 0.88-fold, and 1.25-fold improvement compared to the non-GMT structure. Additionally, when the doping concentration of epitaxial layer is 1 × 1016 cm−3, the GMT achieves an enhanced threshold voltage of +0.26 V. By simulating different bevel angles, field plate parameters, epitaxial layer doping concentrations, and mesa thicknesses, an optimal power figure of merit (PFOM) of 1.914 GW cm−2 is attained. This innovative design introduces a fresh concept for the development of the next generation of high voltage and high-power devices rated above 4 KV.
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