Gate-Length Dependence of Optical Characteristics in Optically Controlled MOSFET

Abstract

The gate-length dependencies of the optical response characteristics in an optically controlled metal oxide semiconductor field effect transistor (MOSFET) have been measured. This device was fabricated as an integrated structure of the absorption region and MOSFET region using the direct wafer-bonding technique. By reducing the gate length of the MOSFET region, the transconductance of the FET channel was increased, and a high current modulation and responsivity was obtained by irradiation of 1.5 µm wavelength light.