Abstract
Simple and accurate models for Gate leakage current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</inf> ) in nanoscale Metal Oxide Semiconductor Field Effect Transistor (MOSFET) are proposed in this paper. The accurate modeling for Oxide Electric field (E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</inf> ) and Oxide voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</inf> ) due to Short Channel Effect (SCE) between the gate and inverted channel is the key for higher accuracy. The Oxide Potential drop due to the charges image at the interface between silicon and silicon Oxide insulator (Δφ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ox</inf> ) is included also at gate to drain and source overlapped leakages (Igdo). The evaluation results for the proposed models matches the results of BSIM4 level 54 model using HSPICE and other published models.
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