Gate-First High-Performance Germanium nMOSFET and pMOSFET Using Low Thermal Budget Ion Implantation After Germanidation Technique

Abstract

The fabrication of high-performance Ge nMOSFET and pMOSFET by using the ion implantation after germanidation (IAG) technique is demonstrated. TaN/Al2O3/GeO2 is deposited as a common gate stack for the low-temperature gate-first process. Both Ge nMOSFET and pMOSFET exhibited a high $I_{\mathrm{\scriptscriptstyle ON}}/I_{\mathrm{\scriptscriptstyle OFF}}$ ratio of $> 10^{4}$ ( $I_{s})$ , a reasonable subthreshold swing of approximately 100 mV/decade, and a low parasitic resistance $ - $\mu \text{m}$ . The IAG technique is proved to be a low thermal budget technique for fabricating both Ge nMOSFET and pMOSFET below 400 °C.