Abstract
We report a first-principles quantum transport study in a single wall boron nitride nanotube sandwiched between a pair of gold electrodes. The non-equilibrium Green’s function approach, in which the electric field effect is explicitly included within a many body framework, is used to calculate the channel current, I sd , in the presence of a transverse gate field, E g . The E g is found to have a profound effect on the electronic current between the source and drain – revealing transistor behavior. The significant modulation in electronic current (ON–OFF current ratio of ∼ 18 at V sd of 3 V) is attributed to the giant Stark shift caused by the gate field.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
