Abstract
The breakdown mechanism of SiC MESFETs has been analyzed by careful investigation of gate leakage current characteristics. It is proposed that gate current-induced avalanche breakdown, rather than drain avalanche breakdown, is the dominant failure mechanism for SiC MESFETs: thermionic-field emission and field emission are dominant for the ON state (above pinch-off voltage) and the OFF state (below pinch-off voltage), respectively. The effect of Si/sub 3/N/sub 4/ passivation on breakdown voltage has been also investigated. Si/sub 3/N/sub 4/ passivation decreases the breakdown voltage due to higher electric field at the gate edge compared to edge fields before passivation. A reduction in surface trapping effects after passivation results in the higher electric field because the depletion region formed by trapped electrons is reduced significantly.
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