Abstract
Gate enhanced power UMOSFET (GE-UMOS) is proposed to decrease the specific on -resistance of the device. The key feature of this structure is that the deep trench polysilicon electrode is contacted to the gate electrode, maintaining the breakdown voltage and forming the high electron current density at side n-drift region, thus resulting in a lower on -resistance compared to the superjunction structure and gradient oxide-bypassed (GOB) structure. Furthermore, the performance of GE-UMOS is proved by comparing with the GOB-UMOS structure.
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