Abstract
In this paper, gate drive IC for SiC power MOSFETs using soft-switching technique gate drive method is designed and implemented. Designed IC is suitable for driving silicon carbide (SiC) power MOSFET. The gate drive IC using soft-switching gate drive method, which is composed of high side and low side soft-switching controller, reduce the overshoot and switching loss of the SiC power MOSFET during the turn-on period effectively. The gate drive IC using soft-switching gate drive method reduces the switching loss by 14% without increasing the overshoot magnitude. To verify the electrical characteristics of the designed IC, simulations and experiments were performed.
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