Gate Driver Circuits With Discrete Components for GaN-Based Multilevel Multi-Inductor Hybrid Converter

Abstract

Gate driver circuits to ensure proper turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> and turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> for power switches are essential parts of a power converter design. They become significantly challenging for multilevel converters, where multiple switches are operated at active voltage domains. The recent favorable use of gallium nitride devices for power switches makes gate driving even more difficult as the switch performance and reliability are very sensitive to the variations of the gate driving signals and power rails compared with traditional power MOSFETs. This article discusses gate driving methods using a multilevel multi-inductor hybrid (MIH) converter as the demonstration prototype to address two key challenges in designing gate drivers: 1) providing level-shifted pulsewidth modulation signals to active voltage domains and 2) powering schemes for gate driver circuits. To solve the first challenge, an optimal use of available half-bridge drivers is proposed to eliminate the need for separate signal isolator chips. This method was implemented and verified in an MIH converter prototype for 48-V point-of-load applications using three different powering schemes for gate drivers, including isolated power modules, regulated supplies from switch blocking voltages, and cascaded bootstrap power rails with regulations. The gate driver techniques and powering schemes are compared experimentally in terms of performance to illustrate their benefits and tradeoffs.