Gate diffusion input (Gdi) technique based CAM cell design for low power and high performance

Abstract

Low Power and high-performance content addressable memory (CAM) designs are beneficial in the diverse application, such as gray-coding, image processing, network routers, and a cache controller. CAM cell consists of the storage unit and comparison unit. Match lines (ML), search lines (SL), bit lines (BL) and control signals of CAM cell is responsible for search delay and power consumption. In this work, a new CAM cell is designed using a gate diffusion input (GDI) technique for low power and low search delay operation. Simulation results show that the proposed CAM cell design using GDI technique exhibits improvement in power and speed when compared to pass transistor based CAM cell and modified low power pass transistor based CAM cell. Simulation results of CAM cell designs are implemented using CMOS 45nm technology node with a supply voltage of 1V. The Process corner and Monte Carlo (MC) simulations are also performed for the proposed design to measure the efficiency of the performance parameter.