Abstract
Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logic devices. Here, we devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolar pn to np diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel.
Highlights
Thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for generation nanoelectronics
A decade after the first isolation and study of twodimensional (2D) materials, their atomically precise integration into van der Waals planar heterostructures[1, 2] is forming an outstanding platform for developing novel nanoelectronic devices[3,4,5]. Such platform has been the source of many recent advances in electrical engineering that takes the advantages of the coupling of mono- or few-layered two-dimensional (2D) materials such as graphene, hexagonal boron nitride (h-BN), and transition metal dichalcogenides (TMDCs)
As the few-layers h-BN is used as the top most layer, it assumes the role of an atomically uniform potential barrier, across which electrons are coupled through the tunnelling process
Summary
Thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for generation nanoelectronics. A decade after the first isolation and study of twodimensional (2D) materials, their atomically precise integration into van der Waals (vdW) planar heterostructures[1, 2] is forming an outstanding platform for developing novel nanoelectronic devices[3,4,5] Such platform has been the source of many recent advances in electrical engineering that takes the advantages of the coupling of mono- or few-layered two-dimensional (2D) materials such as graphene, hexagonal boron nitride (h-BN), and transition metal dichalcogenides (TMDCs). 2H-type molybdenum disulfide (2H-MoS2) has a thickness-dependent bandgap of 1.3 eV indirect gap ~1.9 eV direct gap from bulk down to single layer, respectively[8] It holds great promise for fundamental studies[7, 9, 10], and for future applications such as high performance FETs and opto-electronics[11,12,13,14,15,16,17]. Similar effects can be found in n-type TMDCs vdW interfaced with p-type TMDCs22, 23 or with organic crystal thin films[24]
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