Gate controllable optical spin current generation in zigzag graphene nanoribbon

Abstract

Considering the demand for long spin communication distance in spintronics, graphene presents micrometer spin relaxation length at room temperature, making it one of the most promising two dimensional spintronic materials. However, achieving efficient spin injection (including pure spin current and spin polarized current) by reducing the spin dependent scattering between graphene and other materials like contact is still a core challenge. Here, we propose a novel approach to generate spin current in zigzag graphene nanoribbon (ZGNR) via photogalvanic (or photovoltaic) effect (PGE) from atomic first principle calculations. By designing ZGNR based device with spatial inversion symmetry, we find that the PGE induced pure spin current can be hiddenly generated without accompanying charge current. Furthermore, through applying a dual gate in the system, the generated pure spin current can be controlled when dual gate voltages have the opposite signs. Interestingly, when the signs of dual gate voltages are the same, the pure spin current can turn into the fully spin polarized current. More importantly, the generated spin current via PGE is independent of photon polarization and incident angles. Our investigations demonstrate ZGNR’s great potential application in noninvasive spin injection of the graphene based spintronic device.