Gate Capacitance in Quantum Metal-Oxide-Semiconductor Field-Effect Transistor Devices of Technologically Important Materials

Abstract

The Heisenberg's scientific theory of quantum science since its beginning has been proved to be instrumental in unlocking varied vital quantum phenomena. In what follows the Heisenberg's scientific theory has been used to derive the expressions for the gate capacitance in Quantum MOSFET Devices manufactured from completely different technologically vital nonstandard materials by formulating the 2D electron statistics under very low temperature so that the Fermi function tends to unity. For numerical computations we take Cd3As2, the best quality very high mobility semiconductor and non-linear optical (e.g., CdGeAs2) compounds from which quantum MOSFET devices are made of by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the frame work of Kane's matrix methodology that successively generates new two dimensional electron energy versus wave vector relation for both low and very large externally applied electric field of force respectively. Under many special conditions, the corresponding statistics and therefore the gate capacitance for the quantum MOSFETs, whose e–ks equation (e is carrier energy and ks is the 2D wave vector) are defined by various models of III–V semiconducting samples originally derived by Kane create special cases of our extended formalism. It's been found taking quantum MOSFETs of CdGeAs2, InAs, InSb, Hg1–xCdxTe and In1–xGaxAs yP1–y lattice matched to InP that the gate capacitance at the electrical quantum limit will exhibit monotonic increasing function with changing field at the surface, the applied voltage at the gate for each of the compounds and therefore the actual results have one to one correspondence with the energy band constants showing an inclination of asymptotic results at comparatively large values of the independent variables for all the cases. The gradient rates for all curves change from one material to a different material. With decreasing alloy composition, the gate capacitance will increase for each of quantum confined MOSFETs made of various alloy compounds. For the aim of coherent presentation we've got conjointly planned the periodical Fermi energy at high field of force limits and gate voltage for few quantum confined MOSFETs.