Abstract
We investigate impacts of free carriers on phonon frequency of zone-center optical phonon in Germanium (Ge). By taking advantage of Ge-on-insulator structure, Raman measurement with applying the back-gate bias was performed. The phonon softening was clearly observed by increasing hole density. It is also pointed out that the phonon softening in heavily-doped Ge is mainly attributed to the free carrier effect rather than dopant atom one. Furthermore, we show that the free carrier effect on phonon softening can be simply and reasonably interpreted from the view point of modification of the covalent bonding by free carriers.
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