Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Abstract

We evaluate the total ionizing dose (TID) responses of InGaAs nMOS FinFETs with different gate lengths irradiated with 10-keV X-rays under different gate biases. The largest degradation after irradiation occurs at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> = -1 V. Radiation-induced trapped positive charge dominates the TID response of InGaAs FinFET transistors, consistent with previous results for InGaAs multifin capacitors. Shorter gate-length devices show larger radiation-induced charge trapping than longer gate-length devices, most likely due to the electrostatic effects of trapped charge in the surrounding SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> isolation and SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> spacer oxides. The 1/f noise measurements indicate a high trap density and a nonuniform defect-energy distribution, consistent with a strong variation of effective border-trap density with surface potential.